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Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4809632
Kind Code:
B2
Abstract:
In a stealth dicing process for a semiconductor device with a low dielectric constant layer, the occurrence of poor appearance such as a defective shape or discoloration in the layer is reduced or prevented as follows. A low dielectric constant layer is formed in an interlayer insulating layer formed on the main surface of a semiconductor wafer. A laser beam is focused on the inside of the wafer from the reverse side of the wafer in order to form modified regions selectively. Each modified region is formed in a way to contact, or partially get into, the low dielectric constant layer. In this formation process, the semiconductor wafer is cooled by a cooling element. This reduces or prevents discoloration of the low dielectric constant layer which might occur due to the heat of a laser beam.

Inventors:
阿部 由之
宮崎 忠一
Application Number:
JP2005161803A
Publication Date:
November 09, 2011
Filing Date:
June 01, 2005
Export Citation:
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Assignee:
ルネサスエレクトロニクス株式会社
International Classes:
H01L21/301
Domestic Patent References:
JP2005116844A
JP2004235626A
JP2005019667A
JP2004165227A
Attorney, Agent or Firm:
筒井 大和