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Title:
相変化記憶素子及びその製造方法
Document Type and Number:
Japanese Patent JP4953697
Kind Code:
B2
Abstract:
A phase-change memory device more precisely controls electrical current required to accomplish a phase change by using contact holes that extend between phase change layers that are sized differently from each other.

Inventors:
張 憲 龍
洪 錫 敬
朴 海 贊
Application Number:
JP2006162572A
Publication Date:
June 13, 2012
Filing Date:
June 12, 2006
Export Citation:
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Assignee:
ハイニックス セミコンダクター インク
International Classes:
H01L27/105; H01L21/768; H01L45/00
Domestic Patent References:
JP2005159325A
JP4045583A
JP2004158852A
JP2005150243A
Attorney, Agent or Firm:
三枝 英二
掛樋 悠路
松本 公雄



 
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