Title:
成膜装置
Document Type and Number:
Japanese Patent JP5244723
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a film deposition system where an EL material can be efficiently vaporized and evaporated, and can be fed in high quality and also at a high rate, to provide an evaporation source device therefor, and further, to provide an evaporation source container therefor.SOLUTION: The evaporation source device 20 used in a film deposition system where the surface of the substrate to be vapor-deposited is coated with a vapor deposition material in a vacuum is provided with a heater at the outside thereof, and is further provided with a heater case 210 forming a space at the inside and laminating a plurality of evaporation source containers 220 in a vertical direction so as to be stored. Each evaporation source container 220 is provided with: a container 221 made of a high thermal conduction material which is formed so as to have an almost U-shape in a cross section and formed so as to surround a through-hole 222 for gas discharge almost at the central part; a cover body made of a high thermal conduction material which covers the upper face opening of the container; and a gas gap part introducing the gas of a vapor deposition material generated at the inside of the container into the through-hole for gas discharge from a gap and collecting the gas to a guide part 212 provided at the upper part of the heater case 210 so as to be fed to the surface of the substrate to be vapor-deposited via jet holes 213.
Inventors:
Hiroshi Matsuura
Hideaki Doi
Noboru Kato
Nirazawa Nobuhiro
Hideaki Doi
Noboru Kato
Nirazawa Nobuhiro
Application Number:
JP2009163894A
Publication Date:
July 24, 2013
Filing Date:
July 10, 2009
Export Citation:
Assignee:
Hitachi High-Technologies Corporation
International Classes:
C23C14/24; H01L51/50; H05B33/10
Domestic Patent References:
| JP2007284788A | ||||
| JP2008522029A |
Attorney, Agent or Firm:
Polaire Patent Business Corporation