Title:
ITOスパッタリングターゲットおよびその製造方法
Document Type and Number:
Japanese Patent JP5437919
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an ITO sputtering target which hardly generates cracks even if a content of Sn is small, and particularly hardly generates cracks when bonded to a packing plate.SOLUTION: The ITO sputtering target contains 5 mass% or lower of Sn at SnOconversion, and is -650 to -200 MPa in residual stress. The residual stress is preferable to be -600 to -200 MPa when a thermal expansion coefficient of the packing plate to which the ITO sputtering target is bonded is 2.386×10/°C, and also preferable to be -650 to -250 MPa when the thermal expansion coefficient is larger than 2.386×10/°C. The ITO sputtering target is hardly cracked even if the content of SnOis not larger than 5 mass%. and hardly cracked even if bonded to the copper packing plate or the like.
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Inventors:
Takanori Masaki
Application Number:
JP2010128924A
Publication Date:
March 12, 2014
Filing Date:
June 04, 2010
Export Citation:
Assignee:
Mitsui Mining & Smelting Co., Ltd.
International Classes:
C23C14/34; C04B35/00
Domestic Patent References:
| JP9125236A | ||||
| JP2004323877A | ||||
| JP8176811A | ||||
| JP10025567A | ||||
| JP6293963A | ||||
| JP10147862A | ||||
| JP8035062A |
Attorney, Agent or Firm:
Patent corporation ssinpat