Title:
半導体装置
Document Type and Number:
Japanese Patent JP5597921
Kind Code:
B2
Abstract:
An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode.
Inventors:
Machida 修
Akio Iwabuchi
Akio Iwabuchi
Application Number:
JP2008325409A
Publication Date:
October 01, 2014
Filing Date:
December 22, 2008
Export Citation:
Assignee:
Sanken Electric Co., Ltd.
International Classes:
H01L29/808; H01L21/337; H01L21/338; H01L27/098; H01L29/778; H01L29/812
Attorney, Agent or Firm:
Hidekazu Miyoshi
Yukikuni Iwasaki
Sumio Kawamata
Masakazu Ito
Toshikazu Takahashi
Toshio Takamatsu
Yukikuni Iwasaki
Sumio Kawamata
Masakazu Ito
Toshikazu Takahashi
Toshio Takamatsu