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Title:
大面積で均一な低転位密度GaN基板およびその製造プロセス
Document Type and Number:
Japanese Patent JP5607781
Kind Code:
B2
Abstract:
The invention provides a vapor phase growth process utilizing a growth reactor for forming a large area, uniformly low dislocation density single crystal III-V nitride material on a substrate, said process comprising: (i) a first phase including one or more steps of growing the III-V nitride material on the substrate by a vapor phase growth technique under pitted growth conditions; and (ii) a second phase including one or more steps of growing the III-V nitride material by the vapor phase growth technique under pit-filling conditions effecting closure of pits and annihilation of defects on a growth surface of the III-V nitride material, wherein the process further comprises at least one of the following items (a) and (b): (a) any of the first phase and the second phase comprises a flow of any of ammonia and hydrogen chloride to the growth reactor, and the second phase comprises a lower ratio of flow of ammonia to flow of hydrogen chloride relative to the first phase; and (b) upon conclusion of the second phase, the growth surface is essentially pit-free. The large area, uniformly low dislocation density single crystal III-V nitride material produced by such process is suitable for use as a substrate, for example for the fabrication of microelectronic and/or optoelectronic devices.

Inventors:
ヴァウド, Robert, Py.
Soe, シュエピン
Application Number:
JP2013085654A
Publication Date:
October 15, 2014
Filing Date:
April 16, 2013
Export Citation:
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Assignee:
Cree In condominium lei テッド CREE INC.
International Classes:
C30B29/38; C23C16/34; C30B25/02; C30B25/16; C30B29/40; H01L21/20; H01L21/205; H01L33/00
Attorney, Agent or Firm:
Patent business corporation patent firm Sykes



 
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