Title:
インターディジテイテッドバックコンタクト太陽電池の製造方法
Document Type and Number:
Japanese Patent JP5608609
Kind Code:
B2
Abstract:
A method for manufacturing interdigitated back contact photovoltaic cells, comprises providing on a rear surface of a semiconductor substrate (10) a first doped layer (11) comprising a first dopant type,
providing a dielectric masking layer (13) overlaying the first doped layer (11),
forming a plurality of grooves (17) through the dielectric masking layer (13) and the first doped layer (11), the plurality of grooves (17) extending into the semiconductor substrate (10) in a direction substantially orthogonal to the rear surface and extending in a lateral direction underneath the first doped layer (11) at sides of the plurality of grooves (17),
performing a directional doping step in a direction substantially orthogonal to the rear surface,
thereby providing doped regions (18) with dopants of a second dopant type different from the first dopant type at a bottom of the plurality of grooves (17),
performing a dopant diffusion step, thereby forming at the rear side of the substrate (10) either one of emitter regions (20) or back surface field regions (21) in between the plurality of grooves and the other one of emitter regions (20) or back surface field regions (21) at the bottom of the plurality of grooves.
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Inventors:
バルトロミエイ Jan パフラク
Tom Janssens
Tom Janssens
Application Number:
JP2011131830A
Publication Date:
October 15, 2014
Filing Date:
June 14, 2011
Export Citation:
Assignee:
Eye mEq IMEC
International Classes:
H01L31/068; H01L31/18
Attorney, Agent or Firm:
Yamada Takuji
Mitsuo Tanaka
Mikio Takeuchi
Haruo Nakano
Mitsuo Tanaka
Mikio Takeuchi
Haruo Nakano