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Patent Searching and Data


Title:
静電容量型圧力センサおよび静電容量型圧力センサの製造方法
Document Type and Number:
Japanese Patent JP5649474
Kind Code:
B2
Abstract:
A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.

Inventors:
岡田 瑞穂
Application Number:
JP2011013886A
Publication Date:
January 07, 2015
Filing Date:
January 26, 2011
Export Citation:
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Assignee:
ローム株式会社
International Classes:
G01L9/00; H01L29/84
Attorney, Agent or Firm:
Kosaku Inaoka
Kawasaki Real husband