Title:
半導体装置及びその試験方法
Document Type and Number:
Japanese Patent JP5649478
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor chip with a gate electrode, and a stress detecting element placed on a surface of the semiconductor chip, and which detects stress applied to the surface. The semiconductor device controls a control signal to be applied to the gate electrode in response to stress detected by the stress detecting element. The stress detecting element is preferably provided as a first stress detecting element which detects stress applied to a central portion of the semiconductor chip in plan view. The stress detecting element is preferably provided as a second stress detecting element which detects stress applied to a circumferential portion of the semiconductor chip in plan view.
Inventors:
楢崎 敦司
Application Number:
JP2011030756A
Publication Date:
January 07, 2015
Filing Date:
February 16, 2011
Export Citation:
Assignee:
三菱電機株式会社
International Classes:
H01L21/822; G01L1/18; H01L21/336; H01L21/66; H01L27/04; H01L29/739; H01L29/78; H01L29/84
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita