Title:
プラズマ評価方法、プラズマ処理方法及びプラズマ処理装置
Document Type and Number:
Japanese Patent JP5663658
Kind Code:
B2
Abstract:
Disclosed is a plasma evaluation method that evaluates plasma P that forms a nitride film by an atomic layer deposition method. First, light emission from the plasma P generated from a gas G that contains nitrogen atoms and hydrogen atoms is detected. Then, evaluation of the plasma P is performed by using a result of comparing an intensity ratio between a first peak caused by hydrogen atoms and a second peak different from the first peak and caused by hydrogen atoms in an intensity spectrum of the detected light emission with a reference value calculated in advance from a relationship between the intensity ratio and an indicator that indicates a film quality of the nitride film.
Inventors:
辛川 孝行
上田 博一
上田 博一
Application Number:
JP2013511021A
Publication Date:
February 04, 2015
Filing Date:
April 18, 2012
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/318; C23C16/34; C23C16/52; H01L21/31
Domestic Patent References:
| JPS63289924A | 1988-11-28 | |||
| JPH02148715A | 1990-06-07 | |||
| JPH09306869A | 1997-11-28 | |||
| JP2010186885A | 2010-08-26 | |||
| JP2001284322A | 2001-10-12 | |||
| JP2006045640A | 2006-02-16 | |||
| JPS63289924A | 1988-11-28 | |||
| JPH02148715A | 1990-06-07 | |||
| JPH09306869A | 1997-11-28 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashioka
戸津 Yosuke
Yoshiki Kuroki
Junji Kashioka
戸津 Yosuke