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Title:
不揮発性記憶装置
Document Type and Number:
Japanese Patent JP5809903
Kind Code:
B2
Abstract:
According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.

Inventors:
才田 大輔
天野 実
永澤 鶴美
大沢 裕一
伊藤 順一
Application Number:
JP2011206667A
Publication Date:
November 11, 2015
Filing Date:
September 21, 2011
Export Citation:
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Assignee:
株式会社東芝
International Classes:
H01L21/8246; G11C11/15; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
JP2009021352A
JP2010206023A
JP2005116888A
JP2010114143A
JP2009231753A
JP2011502354A
Foreign References:
US20090015985
US20090244792
US20050041462
US20100109061
Attorney, Agent or Firm:
日向寺 雅彦