Title:
ウエーハの生成方法
Document Type and Number:
Japanese Patent JP6478821
Kind Code:
B2
Abstract:
A wafer having an off angle α is produced from a hexagonal single crystal ingot having an upper surface, a c-plane exposed to the upper surface, and a c-axis perpendicular to the c-plane. The ingot is supported by a wedge member having a wedge angle α equal to the off angle α, thereby inclining the upper surface of the ingot by the off angle α with respect to a horizontal plane. A modified layer is formed by setting the focal point of a laser beam inside the ingot and next applying it to the upper surface, thereby linearly forming a modified layer inside the ingot and cracks extending from the modified layer along the c-plane. The focal point is moved in the second direction to index the focal point by a predetermined amount.
Inventors:
Kazuya Hirata
Application Number:
JP2015114581A
Publication Date:
March 06, 2019
Filing Date:
June 05, 2015
Export Citation:
Assignee:
Disco Co., Ltd.
International Classes:
H01L21/304; B23K26/53; B28D5/04
Domestic Patent References:
| JP2013049161A | ||||
| JP2016015463A | ||||
| JP2015032771A |
Attorney, Agent or Firm:
Akira Matsumoto
Tomohiro Okamoto
Tomohiro Okamoto