Title:
半導体装置
Document Type and Number:
Japanese Patent JP6493083
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing heat generation of a semiconductor element while inhibiting warpage of a conductive substrate.SOLUTION: A semiconductor device comprises: a first insulating substrate 2 joined to a principal surface 11 on a surface of a conductive substrate 1 and a second insulating substrate 3 joined to an opposite principal surface 12 of the conductive substrate 1 on the side opposite to the principal surface; and a semiconductor element 4 surrounded by the first insulating substrate 2 and joined to the principal surface 11 of the conductive substrate 1. Since the semiconductor element 4 is directly mounted on the principal surface 11 of the conductive substrate 1, in comparison with the case of being mounted on the first insulating substrate 2, heat exhaustion of the semiconductor element 4 can be ensured thereby to reduce heat generation of the semiconductor element 4.SELECTED DRAWING: Figure 1
Inventors:
Keiichiro Numakura
Tetsuya Hayashi
Yasuaki Hayami
Yoshino Yusuke
Yuji Saito
Tetsuya Hayashi
Yasuaki Hayami
Yoshino Yusuke
Yuji Saito
Application Number:
JP2015163086A
Publication Date:
April 03, 2019
Filing Date:
August 20, 2015
Export Citation:
Assignee:
Nissan Motor Co., Ltd
International Classes:
H01L23/12; H01L23/36
Domestic Patent References:
| JP2004327732A | ||||
| JP2010034238A | ||||
| JP2015115382A | ||||
| JP2002343911A |
Attorney, Agent or Firm:
Cleo International Law & Patent Office