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Patent Searching and Data


Title:
窒化物半導体デバイス及び窒化物半導体デバイスの製造方法
Document Type and Number:
Japanese Patent JP6729416
Kind Code:
B2
Abstract:
A process of forming a HEMT that makes the contact resistance of a non-rectifying electrode consistent with other device performance is disclosed. The process includes steps of growing a GaN channel layer with a thickness smaller than 600 nm on a SiC substrate at a growth temperature lower than 1050° C. and growing an AlN spacer layer with a flow rate of NH3 at most 10% smaller than a summed flow rate of NH3 and H2. The grown GaN channel layer includes a substantial density of threading dislocations and the grown AlN layer includes a substantial density of pits.

Inventors:
Takeshi Nakata
Application Number:
JP2017007386A
Publication Date:
July 22, 2020
Filing Date:
January 19, 2017
Export Citation:
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Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L21/338; H01L21/205; H01L29/778; H01L29/812
Domestic Patent References:
JP2008166349A
Foreign References:
WO2016051935A1
US20170200806
WO2016181441A1
US20180047840
US20080210949
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
High Kunio Ki
Shotaro Terasawa
Yuta Uemura