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Patent Searching and Data


Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6733516
Kind Code:
B2
Abstract:
There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.

Inventors:
Noriaki Fukiage
Kentaro Oshita
Shimon Otsuki
Hideomi Hane
Atsushi Ogawa
Hiroaki Ikekawa
Application Number:
JP2016226168A
Publication Date:
August 05, 2020
Filing Date:
November 21, 2016
Export Citation:
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Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/318; C23C16/42; C23C16/56; H01L21/31; H01L21/768; H01L23/532
Domestic Patent References:
JP2012079762A
JP2013055243A
JP62051264A
JP2007294924A
JP2015165549A
JP2007520056A
JP2006060170A
Foreign References:
WO2013137115A1
WO2015047731A1
KR1020070028858A
Attorney, Agent or Firm:
Patent Corporation Yayoi Patent Office
Toshio Inoue
Nobuaki Takizawa