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Title:
拡散容器及び不純物拡散装置、及び本装置を用いる不純物拡散方法
Document Type and Number:
Japanese Patent JP6878722
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To perform impurity diffusion after executing inert gas replacement and baking sufficiently in a diffusion vessel, in a diffusion device for compound semiconductor using the diffusion vessel.SOLUTION: A diffusion vessel 100 is provided with a semi-seal section for tightly sealing the cover and the body. An impurity diffusion device 200 is constituted of a vertical type heating furnace 210 movable vertically, and an airtight diffusion chamber 220. The heating furnace is a 2 zone furnace body consisting of a high temperature part heater 211 and a low temperature part heater 212. In the diffusion chamber, a cover open/close mechanism 250 for opening and closing the cover of the diffusion chamber, a cooling mechanism 245 for forcibly cooling the diffusion vessel topically during diffusion stop, process gas introduction/discharge section for introducing/discharging process gas into/from the chamber, and the like, are provided. By using the cover open/close mechanism, gas replacement and baking are executed in the vessel, while opening the cover of the diffusion chamber, and diffusion is stopped completely and ended by quickly chilling the diffusion chamber topically by the cooling mechanism.SELECTED DRAWING: Figure 2

Inventors:
Yasuyuki Homma
Koji Homma
Baba Hisao
Nobuo Kanda
Saito victory
Application Number:
JP2016207851A
Publication Date:
June 02, 2021
Filing Date:
October 24, 2016
Export Citation:
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Assignee:
Chemitronics Co., Ltd.
International Classes:
H01L21/22
Domestic Patent References:
JP2010283345A
JP11150075A
JP8088194A
JP56161683A