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Title:
III族窒化物半導体基板、及び、III族窒化物半導体基板の製造方法
Document Type and Number:
Japanese Patent JP7055595
Kind Code:
B2
Abstract:
There is provided a group III nitride semiconductor substrate(free-standing substrate (30)) that is formed of a group III nitride semiconductor crystal and has a thickness of 300 µm or more and 1000 µm or less. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A difference in a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on each of the first and second main surfaces in parallel to an m axis of the group III nitride semiconductor crystal is 500 arcsec or less.

Inventors:
Hiroki Goto
Yujiro Ishihara
Application Number:
JP2017064486A
Publication Date:
April 18, 2022
Filing Date:
March 29, 2017
Export Citation:
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Assignee:
Furukawa Metal Co., Ltd.
International Classes:
C23C16/02; C30B29/38; C23C16/30; C23C16/34; C23C16/52; H01L21/205
Domestic Patent References:
JP2014196230A
JP2017030984A
JP2011026168A
Foreign References:
WO2015160903A1
Attorney, Agent or Firm:
Shinji Hayami