Title:
【発明の名称】トンネル効果-センサ
Document Type and Number:
Japanese Patent JPH09507575
Kind Code:
A
Abstract:
PCT No. PCT/DE95/00020 Sec. 371 Date Jul. 17, 1996 Sec. 102(e) Date Jul. 17, 1996 PCT Filed Jan. 10, 1995 PCT Pub. No. WO95/19571 PCT Pub. Date Jul. 20, 1995The tunnel effect acceleration sensor has a mass part (4) movable at springs (5) fashioned in a sensor layer (1), particularly a monocrystalline silicon layer of an SOI substrate. A tunnel electrode (6) and a cooperating electrode (7) are arranged lying opposite one another in the plane of this sensor layer (1). One of these electrodes (6,7) is attached to the mass part (4) and one is firmly connected to the substrate. Compensation electrodes (8,9) are present for the electrostatic positioning of the mass part (4).
Inventors:
Marx Beeple
Application Number:
JP51876595A
Publication Date:
July 29, 1997
Filing Date:
January 10, 1995
Export Citation:
Assignee:
Siemens Aktiengesellschaft
International Classes:
G01P15/08; G01P15/13; (IPC1-7): G01P15/08
Attorney, Agent or Firm:
Toshio Yano (3 outside)