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Patent Searching and Data


Document Type and Number:
Japanese Patent JPS6318343
Kind Code:
B2
Abstract:
A Schottky barrier type compound semiconductor device includes an N type compound semiconductor substrate, an insulation layer having a penetrating hole through which part of the substrate is exposed, and a layer of high melting metal formed through the penetrating hole to form a Schottky barrier with the substrate. The insulation layer includes a phosphosilicate glass layer containing phosphorus at a concentration of 1x1021 /cm3 or more and contacting the substrate.

Inventors:
MURATA EIJI
IZUMI HIDEAKI
SUGAWARA ATSUKO
OKANO SUSUMU
Application Number:
JP611679A
Publication Date:
April 18, 1988
Filing Date:
January 24, 1979
Export Citation:
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Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/316; H01L29/47; H01L29/872