PURPOSE: To improve the opening rate of pixels by combining black matrices of an on-chip black structure.
CONSTITUTION: The driving substrate of this active matrix display device is provided with gate wirings 1 in a row form, signal wirings 2 of a column form and pixels disposed in the intersected points of both wirings. These pixels consist of thin-film transistors Tr connected to gate wirings 1 and signal wirings 2 and pixel electrodes 3 connected thereto. The peripheries of the pixel electrodes 3 are shielded from light by the black matrices. The black matrices have the combined structures formed by complementary superposition from first light shielding parts to third light shielding parts on each other. The first light shielding parts consist of metallic films constituting at least the upper parts of the gate wirings 1 and the second light shielding parts consist of metallic films constituting the signal wirings 2 existing upper than the gate wirings 1. The third light shielding parts consist of metallic films 7 which exist upper than the signal wirings 2 via second interlayer insulating films and are connected to the pixel electrodes 3 dividedly by each of the pixels.
IKEDA HIROYUKI
SATO TAKUO
