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Title:
ACTIVE SHIELD FOR GENERATING PLASMA FOR SPUTTERING
Document Type and Number:
Japanese Patent JPH10183342
Kind Code:
A
Abstract:

To prevent accumulated film contamination and an electromagnetic radiation into plasma from attenuating by providing with a conductive shield forming a multiple coil in a plasma generating device of a physical vapor phase accumulating chamber or the like.

A cylindrical plasma chamber 100 housed within the vacuum chamber of the plasma generator is provided with the inner shield 104 formed into the shape of the multiple coil and installed to the inner part so as to insulate with an outer shield 106. The inner wall of the vacuum chamber is protected from the material accumulating within the plasma chamber 100 with the inner shield 104 and the outer shield 106. The high frequency energy from a RF generator is radiated from the inner shield 104 to the inner part of the plasma chamber 100 in an accumulating system to energize plasma within the plasma chamber 100. Ion flux is made to collide with the target 110 biased into a negative by a DC power source.


Inventors:
EDELSTEIN SERGIO
SUBRAMANI MANI
Application Number:
JP31257097A
Publication Date:
July 14, 1998
Filing Date:
October 08, 1997
Export Citation:
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Assignee:
APPLIED MATERIALS INC
International Classes:
C23C14/00; C23C14/34; H01J37/32; H01J37/34; H01L21/02; H01L21/203; H01L21/285; (IPC1-7): C23C14/34; C23C14/00; H01L21/02; H01L21/203; H01L21/285
Attorney, Agent or Firm:
長谷川 芳樹 (外4名)