ALIGNMENT FOR MASK AND WAFER

Japanese Patent JPS61283124

A

PURPOSE:To enable accurately the alignment of a mask on a wafer by forming an interfering light preventive film on the surface of the mask opposed to the wafer side, thereby focusing a focus spot of FZP of high intensity. CONSTITUTION:A mask 11 and a wafer 12 are disposed at a distance D, an FZP mark 13 of focal distance F is formed on the mask 11, and an a FZP mark 14 of focal distance F+D) is formed on the wafer 12. An interfering light preventive film 17 is formed on the side of the mask 11 at the side opposed to the wafer 12. Thus, parallel light beam 15 passing the mask 11 again passes the mask 11 at the reflected light from a region 15 except the FZP mark of the wafer 12 to eliminate the interference with the spot focused on a point P2. The absorption and the reflection are executed by the film 17 without passing the surface of the mask 11 at the interfering light by the film 17, and the light is gradually attenuated in the gap between the mask 11 and the wafer 12. As a result, the focus spot intensity due to the reflection of the FZP mark becomes fresh to accurately align the mask 11 on the wafer 12.

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IIZUKA JUNICHI

JP12483885A

December 13, 1986

June 07, 1985

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FUJITSU LTD

G03F9/00; H01L21/027; H01L21/30; H01L21/67; H01L21/68; (IPC1-7): G03F9/00; H01L21/30; H01L21/68

Sadaichi Igita

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