PURPOSE: To avoid the variation in the film characteristics of the tille amorphous semiconductor by a method wherein Ne gas is introduced together with a material gas.
CONSTITUTION: During the rapid formation step of an amorphous semiconductor film by plasma CVD process at the film formation pressure not exceeding 10-1Torr, Ne gas is led-in in addition to a material gas. On the other hand, a microwave-guide 23 is connected to the upper part of a vacuum vessel 21 through the intermediary of a quartz window 22 to introduce microwaves in the vacuum vessel 21 so that the gasses introduced through gas nozzles 24, 25 may be turned into a plasm by the electron cyclotron resonance 27 generated by a magnetic field coil 26. At this time, the amorphous semiconductor film is rapidly formed at lower film formation pressure by ECR microwave CVD process. Through these procedures, the amorphous semiconductor film receiving little damage can be rapidly formed thereby enabling the high film characteristics to be displayed when a TFT is composed using this film.
| WO/2019/138456 | ACTIVE GAS GENERATION DEVICE |
| JP3555221 | PRODUCTION OF FLUORINE-CONTAINING SILICON OXIDE FILM |
| JPH1184698 | ELECTROPHOTOGRAPHIC LIGHT RECEIVING MEMBER |
FUKUDA TAKUYA
OGAMI MICHIO
TANAKA MASAHIRO
WATANABE KUNIHIKO
