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Title:
ANTIREFLECTION FILM FOR ZINC SELENIDE
Document Type and Number:
Japanese Patent JPS58221804
Kind Code:
A
Abstract:

PURPOSE: To allow the titled film to well transmit CO2 laser light and He-Ne laser light and to provide superior water resistance by forming a thorium tetrafluoride (ThF4) film on the surface of a zinc selenide (ZnSe) substrate with a lead fluoride (PbF2) film in-between.

CONSTITUTION: A PbF2 film 2 having 1.55 refractive index n2 and a Thf4 film 1 having 1.35 refractive index n1 are successively formed on a ZnSe substrate 3 having 2.40 refractive index ns after polishing both sides of the substrate optically and superprecisely. The resulting ZnSe window shows sufficient practicality in a practical test using 5kW CO2 laser, and when the resulting antireflection film is tested in the environment of 45°C and 95% relative humidity, it is not damaged at all even after the passage of 650hr.


Inventors:
MIYATA TAKEO
ONO TAKUHIRO
IWABUCHI TAKASHI
Application Number:
JP1982000104694
Publication Date:
December 23, 1983
Filing Date:
June 19, 1982
Export Citation:
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Assignee:
KOGYO GIJUTSUIN
International Classes:
C01B19/04; G02B1/10; G02B1/11; G02B1/115; G02B1/14; G02B5/28; H01S3/08; (IPC1-7): C01B19/04; G02B5/28; H01S3/02



 
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