To control substrate damage due to discharge between a processing liquid and the substrate when supplying the processing liquid to the substrate in the shape of a rod.

In the substrate processing apparatus 1, a processing liquid nozzle 31 provided as a double-fluid nozzle discharges the processing liquid having the ground potential. Moreover, the substrate 9 is inductively charged, as the processing object, due to the charging of a cup 23 surrounding the circumference of the substrate 9. In processing the substrate 9 with the processing liquid, liquid drops of the processing liquid from the processing liquid nozzle 31 are injected toward the substrate 9 to form a film of the processing liquid. Thereafter, the processing liquid is applied to the substrate 9 in the shape of the rod, because supply of nitrogen gas to the processing liquid nozzle 31 is stopped. Accordingly, when the substrate 9 is processed by supplying the processing liquid on the substrate 9 in the shape of the rod, generation of centralized discharge between the front end of the processing liquid in the shape of the rod and the substrate body is prevented and thereby damage of the substrate 9 generated by discharge between the processing liquid and the substrate 9 can be controlled.