Title:
ATOMIC STEP OBSERVATION METHOD
Document Type and Number:
Japanese Patent JP3234441
Kind Code:
B2
Abstract:
PURPOSE: To enable easy and clear observation of an atomic step by quenching a silicon crystal down to a temperature dropped by a specified temperature after the heating thereof up above a phase transition temperature in vacuum to observe a specified multiplied cycle area formed on the atomic step of the surface of the crystal and other areas being distinguished by a secondary electron image.
CONSTITUTION: When the surface of a silicon crystal is heated in vacuum, the surface of the crystal develops a (1×1) structure with the same cycle as that of the inside of the crystal above a phase transition temperature and a (7×7) structure with a 7 fold cycle below the phase transition temperature. When the surface of the (1×1) structure developed above the phase transition temperature is cooled below the phase transition temperature, the (7×7) structure grows with the end of the atomic step as core. So, an observation sample is heated above (7×7) phase transition temperature-(1×1) phase transition temperature in vacuum and then, it is quenched down to a temperature dropped by 100°C or lower. This process enables the observing of a distribution of the atomic steps on the surface of the crystal of the observation sample being distinguished between the (7×7) structure and the (1×1) structure using a scan type electron microscope.
Inventors:
Yoshikazu Homma
Application Number:
JP10922395A
Publication Date:
December 04, 2001
Filing Date:
May 08, 1995
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
G01B15/08; G01N1/28; G01B15/00; G01N23/225; G01N37/00; G01Q30/20; G01Q90/00; H01J37/22; (IPC1-7): G01N23/225; G01N1/28
Domestic Patent References:
| JP5264485A |
Attorney, Agent or Firm:
Shigeru Kobayashi (2 outside)