BACK SIDE RAPID THERMAL PROCESSING OF PATTERNED WAFERS

Title:

BACK SIDE RAPID THERMAL PROCESSING OF PATTERNED WAFERS

Document Type and Number:

Japanese Patent JP2013093600

Kind Code:

A

Abstract:

To provide a method for managing temperature distribution varying dependently on the patterning of wafer in rapid thermal processing, to greatly enhance the uniformity of rapid thermal processing (RTP).

Provided are an apparatus 60 and a method for thermally treating a wafer 12 or other substrate, such as rapid thermal processing. An array 24 of radiant lamps 26 directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which patterned integrated circuits 16 are formed faces a radiant reflector 28. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes the lamps 26 directed upward, and the reflector 28 located above them and facing the front side of the wafer.

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Inventors:

WOLFGANG ADERHOLD
RAMAMARCY THUNDER
AARON HUNTER

Application Number:

JP2012281042A

Publication Date:

May 16, 2013

Filing Date:

December 25, 2012

Export Citation:

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Assignee:

APPLIED MATERIALS INC

International Classes:

H01L21/26; F26B19/00; F27B5/14; F27B17/00; F27D11/00; F27D19/00; F27D21/00; H01L21/00; H01L21/31

Domestic Patent References:

JP2003086528A	2003-03-20
JP2002270534A	2002-09-20
JP2000234872A	2000-08-29
JP2003257882A	2003-09-12
JP2002506988A	2002-03-05
JP2000515638A	2000-11-21

Attorney, Agent or Firm:

Sonoda Yoshitaka
Kobayashi Yoshinori

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