Title:
BISMUTH-DOPED SEMI-INSULATING GROUP III NITRIDE WATER, AND METHOD FOR PRODUCING THE SAME
Document Type and Number:
Japanese Patent JP2019011245
Kind Code:
A
Abstract:
To provide a bismuth-doped semi-insulating group III nitride wafer, and a method for producing the wafer.SOLUTION: The present invention discloses a bismuth-doped (Bi) semi-insulating wafer of GaAlInN(0≤x≤1, 0≤x+y≤1). The semi-insulating wafer has the resistivity of 10ohm/cm or more. Although it is extremely difficult to obtain a single crystal ingot of group III nitride wafer, an ammonothermal method is capable of growing high-orientation polycrystal or single crystal ingot of group III nitride which has less than 10cmof dislocation/grain boundary density. The present invention also discloses a method for processing a semi-insulating group III nitride bulk crystal and wafer.SELECTED DRAWING: Figure 1
Inventors:
HASHIMOTO TADAO
LETTS EDWARD
SIERRA HOFF
LETTS EDWARD
SIERRA HOFF
Application Number:
JP2018154605A
Publication Date:
January 24, 2019
Filing Date:
August 21, 2018
Export Citation:
Assignee:
SIXPOINT MAT INC
SEOUL SEMICONDUCTOR CO LTD
SEOUL SEMICONDUCTOR CO LTD
International Classes:
C30B29/38; C30B7/10; H01L21/338; H01L29/20; H01L29/778; H01L29/812
Attorney, Agent or Firm:
Hidesaku Yamamoto
Natsuki Morishita
Takatoshi Iida
Daisuke Ishikawa
Kensaku Yamamoto
Natsuki Morishita
Takatoshi Iida
Daisuke Ishikawa
Kensaku Yamamoto