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Title:
BISTABLE SEMICONDUCTOR LASER DEVICE
Document Type and Number:
Japanese Patent JPH01262685
Kind Code:
A
Abstract:

PURPOSE: To contrive to easily obtain a bistable operation and to obtain bistable characteristics of a high rise optical output by a method wherein the optical confinement rate in the direction vertical to an active layer is set at a value of 0.2 or lower and the ratio of an absorption region length to the whole resonator length is set within a prescribed range.

CONSTITUTION: A bistable semiconductor laser consists of an N-type GaAs substrate 1, an N-type Al0.41Ga0.59As clad layer 2, an N-type Al0.35Ga0.65As optical waveguide layer 3, an Al0.08Ga0.92As active layer 4, a P-type Al0.5Ga0.5As light reflection layer 5, a P-type Al0.38Ga0.62As clad layer 6, an N-type GaAs electrode layer 7, a p+ diffused layer (diffused region) 8, an N-type electrode 9, a P-type electrode 10, an absorption region 11, an excitation region 12 and an electrode isolation groove 13. The regions 11 and 12 are optically coupled with each other, the optical confinement rate in the direction vertical to the layer 4 is set at a value of 0.2 or lower and the ratio l3/l of an absorption region length (l3) to the whole resonator length (l) is set within a range of 0.05<l3/l<0.4. Thereby, the clear bistable characteristics of a high rise optical output are obtained.


Inventors:
ISHIKAWA MAKOTO
Application Number:
JP1988000091936
Publication Date:
October 19, 1989
Filing Date:
April 14, 1988
Export Citation:
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Assignee:
NEC CORP
International Classes:
G02F3/00; G02F3/02; H01S5/00; H01S5/042; (IPC1-7): G02F3/00; H01S3/18