BOOTSTRAP CIRCUIT FOR DRIVING POWER MOS TRANSISTOR WITH HIGH-POTENTIAL SIDE DRIVING CONSTITUTION - Consorzio, Per Ric Sulla Microelettronica Nel Mezzogiorno LA.

Title:

BOOTSTRAP CIRCUIT FOR DRIVING POWER MOS TRANSISTOR WITH HIGH-POTENTIAL SIDE DRIVING CONSTITUTION

Document Type and Number:

Japanese Patent JP3528854

Kind Code:

B2

Abstract:

PURPOSE: To actualize the bootstrap circuit which drives a power MOS transistor(TR) with high-potential side constitution wherein the power MOS TR is able to operate with a low-level supply voltage when operating at a high switching frequency.
CONSTITUTION: The bootstrap circuit for the power MOS TR of the high- potential side driving constitution includes a 1st capacitor C1 which can be charged to a 1st voltage level of the supply voltage of the power TR T1. A 2nd capacitor C2 is provided in combination with the 1st capacitor C1 so that a 1st voltage and a 2nd voltage higher than the threshold voltage of the power TR T1 can be used.

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Inventors:

Zisa, Michele
Belluso, Massimiliano
Paparo, Mario

Application Number:

JP19823192A

Publication Date:

May 24, 2004

Filing Date:

July 24, 1992

Export Citation:

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Assignee:

Consorzio, Per Ric Sulla Microelettronica Nel Mezzogiorno LA.
Sgs, Thomson Microelectron Srl

International Classes:

H03K4/58; H03K5/02; H03K17/06; H03K17/687; H03F3/217; H03K19/017; (IPC1-7): H03K5/02; H03F3/217; H03K4/58

Attorney, Agent or Firm:

小川信一（外２名）

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