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Title:
CMOS固体撮像装置およびその駆動方法
Document Type and Number:
Japanese Patent JP4281375
Kind Code:
B2
Abstract:
A CMOS solid state imaging device is capable of achieving a higher image quality while reducing the size and power consumption and increasing the number of pixels and speeds. According to the invention, in a CMOS solid state imaging device, including a light-receiving portion (11) that performs photoelectric conversion according to a quantity of received light, a transfer gate (12a) used to read out charges obtained through the photoelectric conversion in the light-receiving portion (11), and a peripheral transistor provided in a periphery of the light-receiving portion (11), and a driving method of the same, a voltage applied to the transfer gate (12a) is set higher than a voltage applied to the peripheral transistor.

Inventors:
Yasushi Maruyama
Application Number:
JP2003040729A
Publication Date:
June 17, 2009
Filing Date:
February 19, 2003
Export Citation:
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Assignee:
ソニー株式会社
International Classes:
H01L27/146; H04N5/335; H04N5/355; H04N5/369; H04N5/374
Domestic Patent References:
JP11274458A
JP2002247456A
Attorney, Agent or Firm:
Funabashi Kuninori



 
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