To provide a chemical mechanical polishing aqueous dispersion in which occurrence of scratch and peeling, etc. in a semiconductor substrate to-be-polished is reduced even when the semiconductor substrate which has a low dielectric constant material having low mechanical strength as an insulating film is chemically and mechanically polished.
The chemical mechanical polishing aqueous dispersion includes: (A) inorganic particles; (B) at least one type of particles selected from the group consisting of organic particles and organic-inorganic composite particles; (C) at least one selected from the group consisting of quinolinecarboxylic acid, quinolinic acid, a divalent organic acid (excluding quinolinic acid), and a hydroxyl acid; (D) at least one selected from the group consisting of benzotriazole and benzotriazole derivatives; (E) an oxidizing agent; and (F) water. The chemical mechanical polishing aqueous dispersion contains the component (A) in an amount of 0.05 to 2.0 mass% and the component (B) in an amount of 0.005 to 1.5 mass%, has a ratio (WA/WB) of the amount (WA) of the component (A) to the amount (WB) of the component (B) of 0.1 to 200, and has a pH of 1.0 to 5.0.
KONNO TOMOHISA
HATTORI MASAYUKI
KAWAHASHI NOBUO
Yukio Fuse