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Patent Searching and Data


Title:
CHEMICAL VAPOR GROWTH APPARATUS
Document Type and Number:
Japanese Patent JPH04262530
Kind Code:
A
Abstract:

PURPOSE: To obtain a chemical vapor growth apparatus by which an inessential reaction product film and an inessential reaction product are not produced inside a reaction chamber.

CONSTITUTION: While a semiconductor wafer 3 is being heated by using a heater 4, a first reaction gas B and O3 gas C are blown off to the surface of the semiconductor wafer 3. The inner wall of a chamber 1 is heated by using a heater 8. A second reaction gas D (ethylene C2H4 or the like) is blown off from reaction-gas blowoff ports 7 in directions which become distant form a wafer stage 2. Since O radicals are reacted with the second reaction gas D, a reaction product from is not produced. A reaction product does not adhere to the inner wall of the chamber 1 due to a thermal migration. As a result, it is not required to clean the inner wall surface of the chamber by stopping an apparatus periodically and to enhance the operation rate of the apparatus.


Inventors:
YAMAGUCHI TORU
YUKI AKIMASA
Application Number:
JP2309291A
Publication Date:
September 17, 1992
Filing Date:
February 18, 1991
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/285; H01L21/31; (IPC1-7): H01L21/285; H01L21/31
Attorney, Agent or Firm:
Shigeaki Yoshida (2 outside)