CLEANING LIQUID COMPOSITION FOR SEMICONDUCTOR SUBSTRATE, CLEANING METHOD OF SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Japanese Patent JP2005333104

A

To provide a cleaning liquid composition for a semiconductor substrate that improves removal force of residue during cleaning of a metal layer after dry etching and reduces damage of the metal layer to a minimum, a cleaning method of the semiconductor substrate using the composition, and a manufacturing method of a semiconductor device.

A cleaning liquid composition for a semiconductor substrate is manufactured by adding an anti-corrosion agent to an acid solution. After a dry etching process of the semiconductor substrate, when the cleaning liquid composition for the semiconductor substrate is used for surface cleaning of the semiconductor substrate, damage is minimized in a metal layer and an oxide film, and an impurity left on the substrate is easily removed. Thus, the semiconductor device is prevented from being defective, and cleaning time of the semiconductor substrate is reduced.

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HWANG IN-SEAK
RI KINSHU
SONG CHANG-LYONG
KO YONG-SUN
BAEK KUI-JONG
HAN WOONG
LEE KWANG-WOOK

JP2005018534A

December 02, 2005

January 26, 2005

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SAMSUNG ELECTRONICS CO LTD
TECHNO SEMICHEM CO LTD

C11D7/08; C11D1/00; C11D3/02; C11D7/10; C11D7/18; C11D7/32; C11D7/34; C11D7/36; C11D11/00; H01L21/02; H01L21/304; H01L21/306; H01L21/321; H01L21/768; (IPC1-7): H01L21/304; C11D7/08; C11D7/10; C11D7/18; C11D7/32; C11D7/34; C11D7/36

Masaki Hattori

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