CMP SLURRY, CMP METHOD, AND SHALLOW-TRENCH ISOLATION METHOD USING SAME

Title:

CMP SLURRY, CMP METHOD, AND SHALLOW-TRENCH ISOLATION METHOD USING SAME

Document Type and Number:

Japanese Patent JP2007005820

Kind Code:

A

Abstract:

To provide a CMP (chemical-mechanical polishing) slurry, a CMP method, and a shallow-trench isolation method using the same.

The CMP oxide slurry is composed of polishing particles and an aqueous solution including two or more different passivation agents. Preferably, the aqueous solution contains deionized water, and the polishing particles are of a metal oxide selected from a group including ceria, silica, alumina, titania, zirconia and germania. The first passivation agent can be a cationic, anionic, or nonionic surfactant, and the second passivation agent can be phthalic acid or its salt. For example, the first passivation agent is polyvinyl sulfonate, and the second passivation agent is potassium hydrogen phthalate. Such a slurry exhibits a high dislodging selectivity of an oxide to a silicon nitride film.

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Inventors:

LEE JONG-WON
LEE JAE-DONG
IN FUGEN
HAH SANG-ROK

Application Number:

JP2006222695A

Publication Date:

January 11, 2007

Filing Date:

August 17, 2006

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

B24B57/02; B24B37/00; H01L21/304; C09G1/02; C09K3/14; H01L21/3105

Attorney, Agent or Firm:

Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro

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