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Patent Searching and Data

Document Type and Number:
Japanese Patent JP3031255
Kind Code:

PROBLEM TO BE SOLVED: To sufficiently cover the surface of a deposited layer with a low- temperature buffer layer by forming a compound semiconductor buffer layer comprising a single-crystal layer and a spheric single crystal having a specific particle size on the surface of a substrate crystal and further depositing a gallium nitride-based compound semiconductor layer.
SOLUTION: A light emitting element comprises a laminate composed of layers 112-126 formed on, for example, a sapphire substrate 101 having, for example, (0001)-face (C-face) as a preform. The layer 122 is a GaN low- temperature buffer layer which mainly comprises a nearly spheric body composed a single-crystal layer having a thickness (t) in an as-grown state and a spheric body composed mainly of a single crystal having a diameter of 0.1t to 5.0t. The layer 122 is formed by using, for example, the well known organo- metallic thermal decomposition vapor growth method or a vapor phase epitaxial growth method, such as the VPE growth method, etc. On the layer 122, the gallium nitride layers 123-126 are growth at high temperatures.

Udagawa, Takashi
Application Number:
Publication Date:
April 10, 2000
Filing Date:
July 26, 1996
Export Citation:
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International Classes:
C30B29/38; H01L21/20; H01L21/205; H01L33/12; H01L33/28; H01L33/32; H01L33/34; H01L33/40; (IPC1-7): H01L21/20; C30B29/38; H01L21/205; H01L33/00
Attorney, Agent or Firm:
矢口 平