Title:
CUBIC SYSTEM BORON NITRIDE SUBSTRATE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH04360510
Kind Code:
A
Abstract:
PURPOSE: To manufacture a single-crystal cubic system boron nitide substrate having flat large area, in large quantities at a low cost, by depositing a thin film of cubic system boron nitride on a thin film of single-crystal or polycrystalline Cu formed on an Si substrate.
CONSTITUTION: A thin film of single-crystal Cu is epitaxially grown on an Si substrate. A thin film of cubic system boron nitride (c-BN) is grown on the Cu thin film by vapor reaction. Since epitaxial growth is performed on the Cu thin film whose lattice constant is approximate to that of c-BN, said c-BN turns to flat single crystal or polycrystal. Thereby a flat c-BN substrate or a single-crystal c-BN substrate can be manufactured in large quantities at a low cost.
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Inventors:
TOMIKAWA TADASHI
FUJITA NOBUHIKO
TODA NAOHIRO
NAKAYAMA AKIRA
FUJITA NOBUHIKO
TODA NAOHIRO
NAKAYAMA AKIRA
Application Number:
JP16367991A
Publication Date:
December 14, 1992
Filing Date:
June 07, 1991
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B29/38; H01L21/02; (IPC1-7): C30B29/38; H01L21/02
Attorney, Agent or Firm:
Shigeki Kawase