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Title:
DETECTOR FOR INFRARED RAY
Document Type and Number:
Japanese Patent JPS59135779
Kind Code:
A
Abstract:
PURPOSE:To reduce barrier height effectively, and to expand a cut-off wavelength zone of a Schottky type infrared detector by forming a high-concentration impurity region in a guard ring region. CONSTITUTION:A second conduction type guard ring region 2 is formed on a first conduction type semiconductor substrate 1. A field oxide film 3 is formed outside the region 2, and a first conduction type high-concentration impurity region 4 is formed to the inside. A Schottky metal 5 is formed extending over these each region, and a diode formed by the metal 5 and the substrate 1 is used for detecting infrared rays. When the quantity of ions implanted is increased, a cut-off wavelength increases. Since dark currents also increase simultaneously, however, an ion implantation region is formed so as not to be in contact with the guard ring region.

Inventors:
TSUBOUCHI NATSUO
HIRAYAMA MAKOTO
Application Number:
JP1116183A
Publication Date:
August 04, 1984
Filing Date:
January 24, 1983
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L31/108; (IPC1-7): H01L31/10
Domestic Patent References:
JPS57126179A1982-08-05
JPS5034484A1975-04-02



 
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