Title:
DEVICE AND PROCESS FOR MANUFACTURING CRYSTAL OF SEMICONDUCTOR MATERIAL
Document Type and Number:
Japanese Patent JP2016000685
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a novel device and process similar to an FZ process for preparing a crystal of a semiconductor material.SOLUTION: In a crystal preparing apparatus for a semiconductor material, a crucible bottom 5 includes a multiplicity of openings 11 arranged between a top face 9, a lower side 10 and a crucible wall 8, and the center of the crucible bottom 5. Salients 12 are arranged on the top face 9 and the lower side 10 of the crucible bottom 5. The crucible bottom 5 further includes an induction heating coil 7 for stabilizing the molten liquid of a semiconductor material (or a supply raw material 16) arranged below the crucible 1 for melting the semiconductor material and covering a crystal growing in the semiconductor material. By using said crystal preparing apparatus, the semiconductor material crystal preparing process comprises: forming a layer of the semiconductor material over the top face 9 of the crucible bottom 5; melting the layer of the semiconductor material by an induction heating coil 7; passing the molten semiconductor material from the top face 9 of the crucible bottom 5 through the opening 11 in the crucible bottom 5 to the lower side 10 of the crucible bottom 5; covering the growing crystal; and passing the crystal below the salient 12 on the lower side 10 of the crucible bottom 5 to the molten liquid or a region 2 of the molten zone.
Inventors:
GEORG BRENNINGER
GEORG RAMING
GEORG RAMING
Application Number:
JP2015114880A
Publication Date:
January 07, 2016
Filing Date:
June 05, 2015
Export Citation:
Assignee:
SILTRONIC AG
International Classes:
C30B29/06; C01B33/021; C30B13/08; F27B14/10; F27B14/14; F27D11/06
Domestic Patent References:
| JPH05286791A | 1993-11-02 | |||
| JPH11292682A | 1999-10-26 | |||
| JP2003226595A | 2003-08-12 |
Attorney, Agent or Firm:
Fukami patent office