Title:
DRIVE CIRCUIT
Document Type and Number:
Japanese Patent JP2003284319
Kind Code:
A
Abstract:
To provide a drive circuit which can effectively use a highest rated voltage of a power transistor and which can stably operate.
The drive circuit comprises a voltage sensing circuit 9 for sensing a voltage VCE between a collector and an emitter of an IGBT 2 after a surge voltage is attenuated when the IGBT 2 is turned off, and a gate voltage control circuit 10 for suppressing the surge voltage by reducing switching loss by accelerating a cut-off speed of the IGBT 1 if the VCE is lower than a reference voltage VR and delaying the cut-off voltage of the IGBT 2 if the VCE is lower than the voltage VR. Accordingly, the highest rated voltage of the IGBT 2 can be effectively used.
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Inventors:
HASHIDO RYUICHI
OI TAKESHI
OI TAKESHI
Application Number:
JP2002077986A
Publication Date:
October 03, 2003
Filing Date:
March 20, 2002
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L27/04; H01L21/822; H02M1/08; H03F1/02; H03K17/16; (IPC1-7): H02M1/08; H01L21/822; H01L27/04; H03F1/02; H03K17/16
Attorney, Agent or Firm:
Hisami Fukami (4 outside)