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Title:
ELECTRIC FIELD RADIATION ELECTRON SOURCE AND METHOD FOR FABRICATING IT
Document Type and Number:
Japanese Patent JP3508651
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a method for fabricating an electric field radiation electron source with high insulating internal pressure that the aging change of the electron emission efficiency is less.
SOLUTION: A strong electric field drift layer 6 made of an oxidized porous polycrystalline silicon layer is deposited on the main surface of a conductive n-type silicon substrate 1, having a surface electrode 7 formed thereon. An ohmic electrode 2 is formed in the inside of the n-type silicon substrate 1. The drift layer 6 has an oxide layer of a dense SiO2 structure or a structure near to it obtained by heat-treating the porous polycrystalline silicon layer 4 formed by oxidizing the polycrystalline silicon layer 3 with the anode. Thus, the amount of hydrogen entering the drift layer 6 becomes less to prevent degradation of the electron emission efficiency caused by the aging change of the hydrogen distribution as well as enhancing the withstand voltage because of the dense oxide layer.


Inventors:
Hatai, Takashi
Komoda, Takuya
Aizawa, Koichi
Application Number:
JP29594899A
Publication Date:
March 22, 2004
Filing Date:
October 18, 1999
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC WORKS LTD
International Classes:
H01J9/02; (IPC1-7): H01J9/02
Attorney, Agent or Firm:
西川 惠清 (外1名)