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Title:
ELECTRODE FOR P-TYPE SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH02139805
Kind Code:
A
Abstract:

PURPOSE: To provide an electrode to be used for p-type semiconductor in a photoelectric transducing device by forming an oxidated Ir electrode on a base by means of reactive sputtering, wherein either metal Ir or oxidated Ir is used as a target in the oxygen gas.

CONSTITUTION: In a vacuum trough 1 are put a glass based board 2, which is to form a transparent conductive film of oxidated Ir, and a target 3 which consists of Ir. This is further equipped with a high frequency power supply 4, matching box 5, variable leak valve 6 for O2 gas introduction and internal pressure adjustment, thermocouple 7 for sensing the temp. of the base board 2, temp. monitor 8, Cu pipe 9 for cooling, and shutter 11. Therein the pressure in the vacuum trough 1 is held at 0.1-0.01Torr, and high frequency is impressed on the target 3, wherein the electric power shall be below 0.4W/cm2, and the base board 2 is water cooled and the room temp. kept at 20-25°C, and thus sputtering is performed. The temp. characteristic of the DC conductivity of oxidated Ir film is as shown in the appropriate diagram and table, which indicate that the behavior is of the nature of metal with hardly any temp. dependency of conductivity.


Inventors:
FUJIWARA RYOJI
SHIMIZU ISAMU
Application Number:
JP26151089A
Publication Date:
May 29, 1990
Filing Date:
October 06, 1989
Export Citation:
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Assignee:
CANON KK
International Classes:
G02F1/155; H01B5/14; H01B13/00; C23C14/08; H01L31/02; H05B33/12; H05B33/26; H05B33/28; G02F1/15; (IPC1-7): C23C14/08; H01B5/14; H01B13/00
Attorney, Agent or Firm:
Honda Kodaira (3 outside)