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Title:
Electrode structure of a semiconductor device
Document Type and Number:
Japanese Patent JP6066933
Kind Code:
B2
Abstract:
A III-N semiconductor device can include an electrode-defining layer having a thickness on a surface of a III-N material structure. The electrode-defining layer has a recess with a sidewall, the sidewall comprising a plurality of steps. A portion of the recess distal from the III-N material structure has a first width, and a portion of the recess proximal to the III-N material structure has a second width, the first width being larger than the second width. An electrode is in the recess, the electrode including an extending portion over the sidewall of the recess. A portion of the electrode-defining layer is between the extending portion and the III-N material structure. The sidewall forms an effective angle of about 40 degrees or less relative to the surface of the III-N material structure.

Inventors:
ドラ,ユヴァラジ
Application Number:
JP2013556827A
Publication Date:
January 25, 2017
Filing Date:
February 29, 2012
Export Citation:
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Assignee:
トランスフォーム インコーポレーテッド
International Classes:
H01L29/41; H01L21/28; H01L21/336; H01L21/338; H01L29/06; H01L29/423; H01L29/49; H01L29/778; H01L29/78; H01L29/812
Domestic Patent References:
JP2008243848A
JP6140516A
JP4348516A
JP2005276914A
JP2013503483A
JP6291096A
JP2007266030A
Foreign References:
US20110049526
US20080308813
Attorney, Agent or Firm:
平木 祐輔
関谷 三男
渡辺 敏章
松丸 秀和
今村 健一