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Patent Searching and Data


Title:
EPITAXIAL GROWTH METHOD FOR COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH02164794
Kind Code:
A
Abstract:
PURPOSE:To level a curved wafer of a compd. semiconductor as a substrate by depositing foreign matter in a reticular groove formed in the wafer, carrying out epitaxial growth and removing the foreign matter. CONSTITUTION:The surface of a curved wafer 1 of a compd. semiconductor as a substrate is etched to form a reticular groove 2 of >=10mum depth and about 0.1mum width. Foreign matter 3 such as Si3N4 is deposited in the groove 2, epitaxial layers 4 are grown and the foreign matter 3 is removed.

Inventors:
NAKAGAWA MASAHIRO
SHIRAKAWA FUTATSU
TAKEBE TOSHIHIKO
Application Number:
JP31925088A
Publication Date:
June 25, 1990
Filing Date:
December 17, 1988
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B25/18; C30B29/18; C30B29/38; C30B29/60; H01L21/205; (IPC1-7): C30B25/18; C30B29/18; C30B29/38; C30B29/60; H01L21/205