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Title:
ETCHANT COMPOSITION FOR AMORPHOUS ITO TRANSPARENT CONDUCTIVE FILM, AND ETCHING METHOD
Document Type and Number:
Japanese Patent JP2009218513
Kind Code:
A
Abstract:

To provide an etchant composition which is excellent in etching residue removing performance when applied to an amorphous ITO transparent conductive film, further free of deposition of solids and has a longer liquid life than conventional ones.

The etchant composition for amorphous ITO transparent conductive film consists of 100% by weight of (A) 3 to 30% by weight of sulphuric acid, (B) 0.005 to 1% by weight of at least one kind of surfactant selected from a group of an anionic surfactant having a hydrocarbon group with C12, a condensate of naphthalene sulfonic acid with a molecular weight of 1,000 and/or its salt, polystyrenesulfonic acid with a molecular weight of 1,000 and/or its salt, and a nonionic surfactant which has a hydrocarbon group with C12 and also having an HLB value of 12, and (C) water residue, and contains none of phosphoric acid, nitric acid, hydrochloric acid, acetic acid, oxalic acid, and their salts.


Inventors:
YAMABE TAKASHI
MUKAI YOSHIHIRO
NISHIJIMA YOSHITAKA
Application Number:
JP2008000063254
Publication Date:
September 24, 2009
Filing Date:
March 12, 2008
Export Citation:
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Assignee:
NAGASE CHEMTEX CORP
International Classes:
H01L21/306; C09K13/04; C09K13/06; H01B13/00; H01L21/308
Domestic Patent References:
JPH01191788A1989-08-01
JP2002367974A2002-12-20
JP2005197397A2005-07-21
JP2003124203A2003-04-25
JP2007027708A2007-02-01
JPH01191788A1989-08-01
JP2002367974A2002-12-20
JP2005197397A2005-07-21
JP2003124203A2003-04-25
JP2007027708A2007-02-01
Attorney, Agent or Firm:
古谷 信也