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Patent Searching and Data


Title:
ETCHING METHOD AND RECORDING MEDIUM
Document Type and Number:
Japanese Patent JP2009094307
Kind Code:
A
Abstract:

To efficiently etch a silicon oxide film formed on the inside surface of a groove in which a ratio D/W between depth D and opening width W is high.

The etching method of a silicon oxide film 103 on the surface of a substrate W includes an alteration process in which a mixture gas containing hydrogen fluoride and ammonia gas is supplied to the surface of the silicon oxide film 103 so that the silicon oxide film 103 is chemically reacted with the mixture gas, thus the silicon oxide film 103 is altered to generate a reactive product 106, and a heating process where the reactive product 106 is heated for removal. In the alteration process, the temperature of the silicon oxide film 103 is set to be 50C or higher.


Inventors:
MURAKI YUSUKE
TOZAWA SHIGEKI
Application Number:
JP2007263950A
Publication Date:
April 30, 2009
Filing Date:
October 10, 2007
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/302; H01L21/8242; H01L27/108
Domestic Patent References:
JP2007180418A2007-07-12
Attorney, Agent or Firm:
Koji Hagiwara
Tetsuo Kanamoto
Miaki Kametani