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Title:
FILM TRANSISTOR PANEL
Document Type and Number:
Japanese Patent JP2009295983
Kind Code:
A
Abstract:

To provide a film transistor panel.

The film transistor panel includes a dielectric substrate, a plurality of source electrode lead wires, a plurality of gate electrode lead wires, a plurality of pixel electrodes, and a plurality of film transistors. The plurality of the source electrode lead wires are located, parallel to each other; the plurality of gate electrode lead wires are located in parallel each other, and the plurality of the source electrode lead wires; and the plurality of the gate electrode lead wires cross each other to form a plurality of lattices on the dielectric substrate. Inside each lattice, one of the film transistor and one of the pixel electrode are positioned. The source electrode of the film transistor panel is electrically connected with the source electrode lead wire, the drain electrode is electrically connected with the pixel electrode, the gate electrode is electrically connected with the gate electrode lead wire, and a semiconductor layer contains a carbon nanotube structure.


Inventors:
JIANG KAILI
LI QUNQING
FAN FENG-YAN
Application Number:
JP2009135412A
Publication Date:
December 17, 2009
Filing Date:
June 04, 2009
Export Citation:
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Assignee:
UNIV QINGHUA
HON HAI PREC IND CO LTD
International Classes:
H01L29/786; B82Y30/00; C01B31/02
Domestic Patent References:
JP2007123870A2007-05-17
JP2007073706A2007-03-22
JP2009032894A2009-02-12
Foreign References:
WO2007126412A22007-11-08
WO2008075642A12008-06-26
Attorney, Agent or Firm:
Yasuhiko Murayama
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro



 
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