Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
FORMATION OF ELECTRODE AND WIRING
Document Type and Number:
Japanese Patent JPS63261835
Kind Code:
A
Abstract:

PURPOSE: To reduce the deterioration of the interlayer insulating film by performing an patterning by a reactive ion etching (RIE) using a mixed gas of silicon tetrachloride, boron trichloride and oxygen, or trifluorobromomethane as a reaction gas, thereby shaping the cross section of the electrode or wiring into a trapezoid.

CONSTITUTION: A patterning by RIE is performed using a mixed gas of silicon tetrachloride and oxygen, a mixed gas of boron trichloride and oxygen, a mixed gas of silicon tetrachloride and boron trichloride and oxygen, a mixed gas of any one of the mixed gases and chlorine, or trifluorobromomethane as a reaction gas 4a. In RIE, the etching proceeds where the etching exceeds the deposition. With this, the cross-sectional shape of an electrode wiring 5a is made trapezoidal, whereby the deterioration of the interlayer insulating film can be reduced.


Inventors:
GOTO HIROSHI
MATSUTANI TAKESHI
Application Number:
JP1987000097721
Publication Date:
October 28, 1988
Filing Date:
April 20, 1987
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
FUJITSU LTD
International Classes:
H01L21/302; H01L21/3065; H01L21/3205; (IPC1-7): H01L21/302; H01L21/88
Domestic Patent References:
JPS58100684A1983-06-15