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Patent Searching and Data


Title:
FORMATION OF METAL OR MIXED METAL CHALCOGENIDE FILM
Document Type and Number:
Japanese Patent JPS55140705
Kind Code:
A
Abstract:
A low cost chemical spray deposition of metal and mixed metal chalcogenides is accomplished by spray depositing an oxide film from a mixture of a salt of the metal in solution with a water soluble hydrocarbon and water solvent. This oxide film is subjected to a heat treatment in the presence of a chalcogenide gas to induce an ion exchange process transforming the metal oxide or mixed metal oxide into the chalcogenide films of the present invention. The deposition process is used to provide efficient selective absorbing surfaces for a solar thermal energy converter. The process may further be employed to produce a thin film photovoltaic device for converting light energy into electricity.

Inventors:
JIYOSEFU ERU SANSUREGURETSUTO
Application Number:
JP5112680A
Publication Date:
November 04, 1980
Filing Date:
April 19, 1980
Export Citation:
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Assignee:
EXXON RESEARCH ENGINEERING CO
International Classes:
C01G1/02; C01B17/20; C01B19/04; C03C17/22; C04B41/50; C04B41/85; C23C18/12; C23C26/00; C30B25/02; H01L31/032; H01L31/04; H01L31/074; H01L31/18; (IPC1-7): C01B17/20; C01B19/04; C01G1/02; C30B25/00; H01L31/08; H01L31/10