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Title:
FORMATION OF TAPER BY REDUCTION PROJECTION EXPOSURE
Document Type and Number:
Japanese Patent JPS63261836
Kind Code:
A
Abstract:

PURPOSE: To prevent breaking at a step in the upper conductive layer by forming the opening's cross section of the resist layer on an insulating layer into tapered shape with the focus of a reduction projection exposure device being set to an arbitrary value, and etching the insulating layer by are anisotropical etching, thereby opening a tapered throughhole in the insulating layer at the position of the opening of the resist layer.

CONSTITUTION: On a semiconductor substrate 1 an insulating layer 2 is grown, and on this insulating layer 2 a photoresist is applied thereby to form a positive type photoresist layer 3. And exposure and development are performed by a reduction projection exposure method with the focus being set in a defocussed state, thereby forming an opening 4 having a taper angle of θ into a desired shape pattern of contact hole. After the formation of the opening 4, a post-bake is performed in a dry air atmosphere. Subsequently, by a reactive ion etching method or diode parallel plate plasma etching method, with the resist layer 3 as a mask the insulating layer 2 is etched thereby to form a throughhole 5. With this, the pattern size and taper angle θ of the insulating layer 2 can be controlled with a good precision, thereby obviating the possibility that breaking at a step in the upper conductive layer occurs in this part.


Inventors:
KATO SHIGEKI
Application Number:
JP1987000097758
Publication Date:
October 28, 1988
Filing Date:
April 20, 1987
Export Citation:
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Assignee:
NEC CORP
International Classes:
H01L21/302; H01L21/027; H01L21/30; H01L21/3065; H01L21/3205; (IPC1-7): H01L21/30; H01L21/302; H01L21/88
Domestic Patent References:
JPS61166130A1986-07-26
JPS5984529A1984-05-16



 
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